Result: Thickness induced superconducting insulating transition in Nd1.2Ba1.8Cu3Oz ultra-thin films

Title:
Thickness induced superconducting insulating transition in Nd1.2Ba1.8Cu3Oz ultra-thin films
Authors:
SALLUZZO, M, DE LUCA, G. M, VAGLIO, R
Source:
The 2006 applied superconductivity conference, Seattle, WA, August 27-September 1, 2006. Part III of three partsIEEE transactions on applied superconductivity. 17(2):3569-3572
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2007.
Publication Year:
2007
Physical Description:
print, 8 ref 3
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Diodes, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Matériel électrique divers, Various equipment and components, Isolateurs, Insulators, Couche mince, Thin film, Capa fina, Couche ultramince, Ultrathin films, Couche épitaxique, Epitaxial film, Capa epitáxica, Diffraction RX, X ray diffraction, Difracción RX, Diode, Diodo, Diélectrique, Dielectric materials, Dieléctrico, Epaisseur couche, Layer thickness, Espesor capa, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Haute pression, High pressure, Alta presión, Isolateur, Insulator, Aislador, Modèle 2 dimensions, Two dimensional model, Modelo 2 dimensiones, Pression oxygène, Oxygen pressure, Presión oxígeno, Pulvérisation irradiation, Sputtering, Pulverización irradiación, Relation ordre, Ordering, Relación orden, Revêtement pulvérisation, Sputter coating, Revestimiento pulverización, Résistivité, Resistivity, Resistividad, Source rayonnement synchrotron, Synchrotron radiation sources, Supraconducteur haute température, High temperature superconductor, Supraconductor alta temperatura, Système désordonné, Disordered system, Sistema desordenado, Transition supraconductrice, Superconducting transition, Transición superconductora, HTS thin films, RBCO, sputtering
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
CNR-INFM COHERENTIA, Complesso MonteSantangelo, Via Cinthia, Napoli 80126, Italy
ISSN:
1051-8223
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=19017076
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electrical engineering. Electroenergetics

Electronics
Accession Number:
edscal.19017076
Database:
PASCAL Archive

Further Information

A study of the thickness induced superconducting to insulator transition in Nd1.2Ba1.8Cu3Oz (NdBCO) epitaxial films is presented. The samples have been deposited by high oxygen pressure diode sputtering on SrTiO3 (100) substrates. Accurate structural characterizations have been carried out in function of the film thickness by x-ray diffraction using conventional and synchrotron radiation sources. The superconductor to insulator transition is correlated to a structural transformation from a pseudotetragonal phase, characterized by the presence of short Cu(1)O chains in both a and b directions, to a tetragonal structure where Cu(1)O chains are completely destroyed. We demonstrate that the ordering of oxygen ions is essential for the appearance of the superconductivity, while oxygen disorder in the Cu(1)O planes, leads to a two-dimensional MOTT insulating behavior of the resistivity associated to a localization of the carriers within lengths lower than 3 nm.