Result: 0-terminated nano-diamond ISFET for applications in harsh environment

Title:
0-terminated nano-diamond ISFET for applications in harsh environment
Authors:
DIPALO, M, PIETZKA, C, DENISENKO, A, EL-HAJJ, H, KOHN, E
Source:
Proceedings of Diamond 2007, the 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon CarbideDiamond and related materials. 17(7-10):1241-1247
Publisher Information:
Amsterdam: Elsevier, 2008.
Publication Year:
2008
Physical Description:
print, 20 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Fullerènes et matériaux apparentés; diamants, graphite, Fullerenes and related materials; diamonds, graphite, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.), Chimie, Chemistry, Chimie generale et chimie physique, General and physical chemistry, Electrochimie, Electrochemistry, Cinétique et mécanisme des réactions, Kinetics and mechanism of reactions, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Addition bore, Boron additions, Bore, Boron, Diamant, Diamonds, Dépôt chimique phase vapeur filament chaud, Hot filament chemical vapor deposition, Depósito químico fase vapor filamento caliente, Electrochimie, Electrochemistry, Electrode commande, Gates, Traitement chimique, Chemical treatment, Tratamiento químico, Transistor effet champ, Field effect transistors, pH, pH value, 8105U, 8115G, 8245A, 8530T, Substrat diamant, Substrat silicium, Harsh environment, ISFET, NCD, Oxygen termination
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Institute of Electron Devices and Circuits, University of Ulm, Germany
ISSN:
0925-9635
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=20664039
Rights:
Copyright 2008 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

General chemistry and physical chemistry

Physics and materials science
Accession Number:
edscal.20664039
Database:
PASCAL Archive

Further Information

The concept of an ion-sensitive FET (ISFET) on diamond with boron delta-doped channel and oxygen-terminated surface for pH sensing has been successfully transferred to large-area nano-crystalline diamond on silicon substrates. The nano-crystalline diamond layers, including the boron delta-doped channels of the FETs, were grown by hot-filament CVD. The fabricated layers were characterised by their peak concentration of boron of 3 x 1020 1/cm3 and FWHM of about 1 nm. This allowed approx. 50% modulation of the channel current within the gate potential range corresponding to the potential window of water electrolysis on the diamond surface. The 0-termination by combination of oxygen-plasma and wet chemical treatments resulted in a pH sensitivity of the ISFETs close to the Nemst's limit in the range between pH1 and pH13. The ISFET characteristics were stable even after anodic treatment in KOH. This allows using nano-crystalline diamond ISFETs with 0-termination also as electrodes and even at anodic overpotentials.