Treffer: 100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS
Title:
100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS
Authors:
Source:
IEEE journal of solid-state circuits. 44(10):2663-2670
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2009.
Publication Year:
2009
Physical Description:
print, 14 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Amplificateurs, Amplifiers, Amplificateur différentiel, Differential amplifier, Amplificador diferencial, Circuit intégré BiCMOS, BiCMOS integrated circuits, Circuit séparateur, Separator circuit, Circuito separador, Composé III-V, III-V compound, Compuesto III-V, Dissipation énergie, Energy dissipation, Disipación energía, Gain, Ganancia, Haute performance, High performance, Alto rendimiento, Intégration sur plaquette, Wafer-scale integration, Pastille électronique, Wafer, Pastilla electrónica, Technologie MOS complémentaire, Complementary MOS technology, Tecnología MOS complementario, Transistor bipolaire hétérojonction, Heterojunction bipolar transistors, Vitesse balayage, Slew rate, Velocidad de exploración, Indium Phosphide (InP), differential amplifier, heterojunction bipolar transistor (HBT), wafer-scale integration
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Microelectronics Laboratory, HRL Laboratories LLC, Malibu, CA 90265, United States
ISSN:
0018-9200
Rights:
Copyright 2015 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.22157593
Database:
PASCAL Archive
Weitere Informationen
Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain-bandwidth product of 40-130 GHz and low frequency gain > 45 dB. The use of InP DHBTs supports a > 6.9 V differential output swing and a slew rate > 4 x 104 V/μs to be achieved with as low as 40 mW dissipated power. A novel on-chip buffer circuit is used to facilitate the on-wafer characterization of these amplifiers. To the authors' knowledge, this is the first demonstration of a high performance IC building block in a heterogeneously integrated process technology.