CHINGWEI LI, J., ELLIOTT, K. R., MATTHEWS, D. S., HITKO, D. A., ZEHNDER, D., ROYTER, Y., PATTERSON, P. R., HUSSAIN, T., & JENSEN, J. F. (2009, January 1). 100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm In P DHBTs and 130 nm CMOS. 44(10). New York, NY: Institute of Electrical and Electronics Engineers, 2009. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=22157593

CHINGWEI LI, James, ELLIOTT, Kenneth R, MATTHEWS, David S, HITKO, Donald A, ZEHNDER, Daniel, ROYTER, Yakov, PATTERSON, Pamela R, HUSSAIN, Tahir and JENSEN, Joseph F, 2009. 100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm In P DHBTs and 130 nm CMOS. In: [online]. New York, NY: Institute of Electrical and Electronics Engineers, 2009. 1 January 2009. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=22157593

CHINGWEI LI, J., K. R. ELLIOTT, D. S. MATTHEWS, D. A. HITKO, D. ZEHNDER, Y. ROYTER, P. R. PATTERSON, T. HUSSAIN, and J. F. JENSEN. 100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm In P DHBTs and 130 nm CMOS. no. 10, New York, NY: Institute of Electrical and Electronics Engineers, 2009., 2009, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=22157593.

CHINGWEI LI, J., ELLIOTT, K.R., MATTHEWS, D.S., HITKO, D.A., ZEHNDER, D., ROYTER, Y., PATTERSON, P.R., HUSSAIN, T. and JENSEN, J.F. (2009), “100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm In P DHBTs and 130 nm CMOS”, in , Vol. 44, New York, NY: Institute of Electrical and Electronics Engineers, 2009., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=22157593.