TANIYASU, Y., KASU, M., & MAKIMOTO, T. (2007, January 1). Threading dislocations in heteroepitaxial Al N layer grown by MOVPE on Si C (0001) substrate. 298. Amsterdam: Elsevier, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578753
ISO-690 (author-date, English)TANIYASU, Yoshitaka, KASU, Makoto and MAKIMOTO, Toshiki, 2007. Threading dislocations in heteroepitaxial Al N layer grown by MOVPE on Si C (0001) substrate. In: [online]. Amsterdam: Elsevier, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578753
Modern Language Association 9th editionTANIYASU, Y., M. KASU, and T. MAKIMOTO. Threading dislocations in heteroepitaxial Al N layer grown by MOVPE on Si C (0001) substrate. Amsterdam: Elsevier, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578753.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
TANIYASU, Y., KASU, M. and MAKIMOTO, T. (2007), “Threading dislocations in heteroepitaxial Al N layer grown by MOVPE on Si C (0001) substrate”, in , Vol. 298, Amsterdam: Elsevier, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578753.