KIM, G.-H., KANG, Y.-R., KIM, W.-J., KIM, S.-Y., & KIM, C.-I. (2007, Januar 1). Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process. 515(12). Lausanne: Elsevier Science, 2007. Abgerufen von http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18654561
ISO-690 (author-date, English)KIM, Gwan-Ha, KANG, Young-Rog, KIM, Whan-Jun, KIM, Sang-Yong und KIM, Chang-Il, 2007. Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process. In: [online]. Lausanne: Elsevier Science, 2007. 1 Januar 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18654561
Modern Language Association 9th editionKIM, G.-H., Y.-R. KANG, W.-J. KIM, S.-Y. KIM, und C.-I. KIM. Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process. Nr. 12, Lausanne: Elsevier Science, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18654561.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
KIM, G.-H., KANG, Y.-R., KIM, W.-J., KIM, S.-Y. und KIM, C.-I. (2007), „Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process“, in , Bd. 515, Lausanne: Elsevier Science, 2007., verfügbar unter: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18654561.