RASKIN, Y., SALAMEH, A., BETEL, D., & ROIZIN, Y. (2007, Januar 1). Reliability of HTO based high-voltage gate stacks for flash memories. 47(4-5). Oxford: Elsevier, 2007. Abgerufen von http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790346
ISO-690 (author-date, English)RASKIN, Yosef, SALAMEH, Asaad, BETEL, David und ROIZIN, Yakov, 2007. Reliability of HTO based high-voltage gate stacks for flash memories. In: [online]. Oxford: Elsevier, 2007. 1 Januar 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790346
Modern Language Association 9th editionRASKIN, Y., A. SALAMEH, D. BETEL, und Y. ROIZIN. Reliability of HTO based high-voltage gate stacks for flash memories. Nr. 4-5, Oxford: Elsevier, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790346.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
RASKIN, Y., SALAMEH, A., BETEL, D. und ROIZIN, Y. (2007), „Reliability of HTO based high-voltage gate stacks for flash memories“, in , Bd. 47, Oxford: Elsevier, 2007., verfügbar unter: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790346.