ASENOV, A., KALNA, K., THAYNE, I., & HILL, R. J. W. (2007, January 1). Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications. 84(9-10). Amsterdam: Elsevier Science, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853589
ISO-690 (author-date, English)ASENOV, A, KALNA, K, THAYNE, I and HILL, R. J. W, 2007. Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications. In: [online]. Amsterdam: Elsevier Science, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853589
Modern Language Association 9th editionASENOV, A., K. KALNA, I. THAYNE, and R. J. W. HILL. Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications. no. 9-10, Amsterdam: Elsevier Science, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853589.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
ASENOV, A., KALNA, K., THAYNE, I. and HILL, R.J.W. (2007), “Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications”, in , Vol. 84, Amsterdam: Elsevier Science, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853589.