EL KAZZI, M., WEBB, D. J., MARCHIORI, C., CZORNOMAZ, L., ROSSEL, C., GERL, C., RICHTER, M., SOUSA, M., CAIMI, D., SIEGWART, H., & FOMPEYRINE, J. (2011, January 1). 1.2 nm capacitance equivalent thickness gate stacks on Si-passivated Ga As. 88(7). Amsterdam: Elsevier, 2011. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=24284416
ISO-690 (author-date, English)EL KAZZI, M, WEBB, D. J, MARCHIORI, C, CZORNOMAZ, L, ROSSEL, C, GERL, C, RICHTER, M, SOUSA, M, CAIMI, D, SIEGWART, H and FOMPEYRINE, J, 2011. 1.2 nm capacitance equivalent thickness gate stacks on Si-passivated Ga As. In: [online]. Amsterdam: Elsevier, 2011. 1 January 2011. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=24284416
Modern Language Association 9th editionEL KAZZI, M., D. J. WEBB, C. MARCHIORI, L. CZORNOMAZ, C. ROSSEL, C. GERL, M. RICHTER, M. SOUSA, D. CAIMI, H. SIEGWART, and J. FOMPEYRINE. 1.2 nm capacitance equivalent thickness gate stacks on Si-passivated Ga As. no. 7, Amsterdam: Elsevier, 2011., 2011, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=24284416.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
EL KAZZI, M., WEBB, D.J., MARCHIORI, C., CZORNOMAZ, L., ROSSEL, C., GERL, C., RICHTER, M., SOUSA, M., CAIMI, D., SIEGWART, H. and FOMPEYRINE, J. (2011), “1.2 nm capacitance equivalent thickness gate stacks on Si-passivated Ga As”, in , Vol. 88, Amsterdam: Elsevier, 2011., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=24284416.