Result: White X-ray beam topography and radiography of Si1-xGex crystals bonded to silicon
Title:
White X-ray beam topography and radiography of Si1-xGex crystals bonded to silicon
Authors:
Source:
8th Biennial Conference on High Resolution X-ray Diffraction and imaging (XTOP 2006), Karlsruhe/Baden-Baden, Germany, 19-22 September 2006Physica status solidi. A, Applications and materials science (Print). 204(8):2669-2674
Publisher Information:
Berlin: Wiley-VCH, 2007.
Publication Year:
2007
Physical Description:
print, 16 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Nanotechnologies, nanostructures, nanoobjects, Nanotechnologies, nanostructures, nanoobjets, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Etude expérimentale de défauts par diffraction et diffusion, Experimental determination of defects by diffraction and scattering, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structures de basse dimensionnalité (superréseaux, puits quantiques, multicouches): structure et propriétés non électroniques, Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties, Dislocation, Dislocations, Déformation plastique, Plastic deformation, Déformation élastique, Elastic deformation, Germanium siliciure, Germanium silicides, Germination dislocation, Dislocation nucleation, Interface solide solide, Solid-solid interfaces, Microfissure, Microcracks, Silicium, Silicon, Structure défaut, Defect structure, Ségrégation, Segregation, Topographie RX, X-ray topography, 6172D, 6865A, Si1-xGex, Si
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Ioffe Physico-Technical Institute of Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russian Federation
X-ray Imaging Center, Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31 Hyoja-dong, Namku, Pohang, 790-784, Korea, Republic of
Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, Bolshoy 61, Vasil. Ostrov, 199178 St. Petersburg, Russian Federation
Institute of Crystal Growth, 12489 Berlin, Germany
X-ray Imaging Center, Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31 Hyoja-dong, Namku, Pohang, 790-784, Korea, Republic of
Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, Bolshoy 61, Vasil. Ostrov, 199178 St. Petersburg, Russian Federation
Institute of Crystal Growth, 12489 Berlin, Germany
ISSN:
1862-6300
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.19018858
Database:
PASCAL Archive
Further Information
The defect structure of Si1-xGex wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and phase-sensitive radiography. The heterostructures were manufactured by direct bonding of Si1-xGex and Si crystalline wafers made of bulk crystals that were grown by the Czochralski technique. In Si1-xGex crystals, the segregations of Ge act as dislocation nucleation sites. In Si1-xGex/Si bonded structures, the segregation of Ge as well as the accumulation of dislocations induce elastic strain and plastic deformation during high-temperature bonding annealing. With the topography-radiography combination, we are able not only to detect microcracks, indicating nonbonded areas, by radiography, but also to reveal dislocations and long-range strain fields by topography at the same time.