• The role of structural defects...

Result: The role of structural defects and texture variability in the performance of poly-Si thin film transistors

Title:
The role of structural defects and texture variability in the performance of poly-Si thin film transistors
Authors:
VOUTSAS, A. T
Source:
Proceedings of symposium I on thin films for large area electronics: EMRS 2007[2006] conference, Nice, FranceThin solid films. 515(19):7406-7412
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 15 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Cristallisation, Crystallization, Défaut cristallin, Crystal defects, Joint grain, Grain boundaries, Microstructure, Polycristal, Polycrystals, Relation structure propriété, Property structure relationship, Relación estructura propiedad, Seuil tension, Voltage threshold, Umbral tensión, Silicium polycristallin, Polysilicon, Silicio policristal, Texture, Traitement par laser, Laser assisted processing, Transistor couche mince, Thin film transistors, 6855J, 8530T, Si, Polycrystalline silicon, Thin-film transistors
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
LCD Process Technology Laboratory, Sharp Labs of America, Inc., 5700 NW Pacific Rim Boulevard, Camas, Washington 98607, United States
ISSN:
0040-6090
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=19031573
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.19031573
Database:
PASCAL Archive

Further Information

High-performance poly-Si Thin Film Transistors (TFTs) with champion mobility and threshold voltage characteristics have been reported by several groups in the literature. Performance improvements have been especially spectacular after the wide acceptance of laser-based, lateral crystallization technology and its numerous variants. Despite the noted improvements in average transistor performance, variation in TFT characteristics still presents substantial difficulties to control. Speculation on the cause of the variation has been provided by various sources but, so far, no systematic study has been performed to that effect. In this work we have conducted an extensive study of characteristics of poly-Si TFTs, fabricated by laser crystallization, and their relationship to the microstructural details of the active layer. Our study clarifies the effect of a single grain boundary inclusion in the device channel and pinpoints the key causes of variation in performance even in the absence of hard boundaries. The existence of structural defects, as well as texture variation, is found to correlate well with the observed variability in TFT mobility and threshold voltage. These findings have also been confirmed by a simple quantitative model. Our work points to the importance in achieving consistent microstructure and the difficulty in doing so by employing blanket crystallization technologies. To that end, crystallization technology emphasizing location control appears to be preferable.