BABOUX, N., BUSSERET, C., PLOSSU, C., & BOIVIN, P. (2007, January 1). Peculiarities of electron tunnel injection to the drain of EEPROMs. 47(4-5). Oxford: Elsevier, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790350
ISO-690 (author-date, English)BABOUX, N, BUSSERET, C, PLOSSU, C and BOIVIN, P, 2007. Peculiarities of electron tunnel injection to the drain of EEPROMs. In: [online]. Oxford: Elsevier, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790350
Modern Language Association 9th editionBABOUX, N., C. BUSSERET, C. PLOSSU, and P. BOIVIN. Peculiarities of electron tunnel injection to the drain of EEPROMs. no. 4-5, Oxford: Elsevier, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790350.
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BABOUX, N., BUSSERET, C., PLOSSU, C. and BOIVIN, P. (2007), “Peculiarities of electron tunnel injection to the drain of EEPROMs”, in , Vol. 47, Oxford: Elsevier, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18790350.