CHANG, M., HASAN, M., JUNG, S., PARK, H., JO, M., CHOI, H., KWON, M., HWANG, H., & CHOI, S. (2007, January 1). Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing. 84(9-10). Amsterdam: Elsevier Science, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853496
ISO-690 (author-date, English)CHANG, Man, HASAN, Musarrat, JUNG, Seungjae, PARK, Hokyung, JO, Minseok, CHOI, Hyejung, KWON, Moonjae, HWANG, Hyunsang and CHOI, Sangmoo, 2007. Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing. In: [online]. Amsterdam: Elsevier Science, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853496
Modern Language Association 9th editionCHANG, M., M. HASAN, S. JUNG, H. PARK, M. JO, H. CHOI, M. KWON, H. HWANG, and S. CHOI. Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing. no. 9-10, Amsterdam: Elsevier Science, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853496.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
CHANG, M., HASAN, M., JUNG, S., PARK, H., JO, M., CHOI, H., KWON, M., HWANG, H. and CHOI, S. (2007), “Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing”, in , Vol. 84, Amsterdam: Elsevier Science, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853496.